TIC216 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – SILICON TRIACS

TIC216 SERIES
SILICON TRIACS
● Sensitive Gate Triacs
● 6 A RMS
● Glass Passivated Wafer
● 400 V to 800 V Off-State Voltage
● Max I_GT of 5 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC216D
Repetitive peak off-state voltage (see Note 1)
TIC216M
TIC216S
TIC216N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
V_DRM
I_T(RMS)
I_TSM
I_GM
P_GM
P_G(AV)
T_C
T_stg
T_L
VALUE
400
600
700
800
6
60
±1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
I_DRM
PARAMETER
Repetitive peak
off-state current
Gate trigger
I_GT
current
V_D = rated V_DRM
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
TEST CONDITIONS
I_G = 0
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
T_C = 110°C
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
MIN TYP MAX UNIT
±2
mA
5
-5
mA
-5
10
† All voltages are with respect to Main Terminal 1.
PRODUCT INFORMATION
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1