MX26F128J3 Datasheet, PDF (15/47 Pages) List of Unclassifed Manufacturers – Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY

MX26F128J3
Device Geometry Definition
This field provides critical details of the eLiteFlash^TM memory device geometry.
Table 10. Device Geometry Definition
Offset Length
27h
1
28h
2
2Ah
2
2Ch
1
2Dh
4
Description
"n" such that device size = 2ⁿ in number of bytes
eLiteFlash^TM memory device interface: x8 async(28:00,29:00),
x16 async(28:01,29:00), x8/x16 async(28:02,29:00)
"n" such that maximum number of bytes in write buffer = 2ⁿ
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in "bulk"
2. x specifies the number of device or partition regions with one or
more contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0-15 = y, y+1 = number of identical-size erase blocks
bits 16-31 = z, region erase block(s) size are z x 256 bytes
Code See Table
Below
27:
28: --02 x8/x16
29: --00
2A: --05 32
2B: --00
2C: --01
1
2D:
2E:
2F:
30:
Device Geometry Definition
Address
27:
28:
29:
2A:
2B:
2C:
2D:
2E:
2F:
30:
128M
--18
--02
--00
--05
--00
--01
--7F
--00
--00
--02
P/N:PM0960
REV. 1.1,OCT. 18, 2004
15