NT256D64S88A2GM Datasheet, PDF (12/14 Pages) List of Unclassifed Manufacturers – 200pin One Bank Unbuffered DDR SO-DIMM

NT256D64S88A2GM
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DDR SO-DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
( TA = 0 °C ~ 70 °C ; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
Symbol
Parameter
tIS
tIPW
tRPRE
Address and control input setup time
(slow slewrate)
Input pulse width
Read preamble
-7K
Min.
Max.
1.0
2.2
0.9
1.1
-75B
Min.
Max.
1.0
2.2
0.9
1.1
-8B
Min.
Max.
1.1
-
0.9
1.1
Unit Notes
2, 3, 4,
ns ^{10, 11,}
12, 14
2, 3, 4,
ns
12
tCK 1,2,3,4
tRPST
tRAS
Read postamble
Active to Precharge command
0.40
0.60
0.40
0.60
0.40
0.60
tCK 1,2,3,4
45
120,000
45
120,000
50
120,000 ns 1,2,3,4
Active to Active/Auto-refresh
tRC
65
65
70
ns 1,2,3,4
command period
Auto-refresh to Active/Auto-refresh
tRFC
75
75
80
ns 1,2,3,4
command period
tRCD Active to Read or Write delay
20
20
20
ns 1,2,3,4
Active to Read Command with
tRAP
20
20
20
ns 1,2,3,4
Autoprecharge
tRP
Precharge command period
20
20
20
ns 1,2,3,4
Active bank A to Active bank B
tRRD
15
15
15
ns 1,2,3,4
command
tW R
Write recovery time
Auto precharge write recovery +
tDAL
precharge time
15
(tW R/
tCK )
+
(tRP/
tCK )
15
(tW R/
tCK )
+
(tRP /
tCK )
15
(tW R/
tCK )
+
(tRP /
tCK )
ns 1,2,3,4
1, 2, 3,
tCK
4, 13
tWTR Internal write to read command delay
1
1
1
tCK 1,2,3,4
Exit self-refresh to non-read
tXSNR
75
75
80
ns 1,2,3,4
command
tXSRD
tREFI
Exit self-refresh to read command
Average Periodic Refresh Interval
200
200
200
tCK 1,2,3,4
1, 2, 3,
7.8
7.8
7.8
µs
4, 8
Preliminary 01 / 2002
12
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