GS71108ATP Datasheet, PDF (7/14 Pages) List of Unclassifed Manufacturers – 128K x 8 1Mb Asynchronous SRAM

GS71108ATP/J/SJ/U
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip enable to end of write
Data set up time
Data hold time
Write pulse width
Address set up time
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
Write to output in High Z
-7
-8
-10
-12
Symbol
Unit
Min Max Min Max Min Max Min Max
tWC
7
—
8
—
10
—
12
—
ns
tAW
5
—
5.5
—
7
—
8
—
ns
tCW
5
—
5.5
—
7
—
8
—
ns
tDW
3
—
4
—
5
—
6
—
ns
tDH
0
—
0
—
0
—
0
—
ns
tWP
5
—
5.5
—
7
—
8
—
ns
tAS
0
—
0
—
0
—
0
—
ns
tWR
0
—
0
—
0
—
0
—
ns
tWR1
0
—
0
—
0
—
0
—
ns
tWLZ^*
3
—
3
—
3
—
3
—
ns
tWHZ^*
—
3
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested
Rev: 1.04a 10/2002
7/14
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.