GS71108ATP Datasheet, PDF (3/14 Pages) List of Unclassifed Manufacturers – 128K x 8 1Mb Asynchronous SRAM

GS71108ATP/J/SJ/U
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
Output Voltage
VIN
–0.5 to V_DD +0.5
V
(≤ 4.6 V max.)
VOUT
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Recommended Operating Conditions
Parameter
Symbol Min
Supply Voltage for -7/-8/-10/-12
V_DD
3.0
Input High Voltage
Input Low Voltage
VIH
2.0
VIL
–0.3
Ambient Temperature,
Commercial Range
TAc
0
Ambient Temperature,
Industrial Range
TAI
–40
Typ
Max
Unit
3.3
3.6
V
—
V_DD +0.3
V
—
0.8
V
—
70
o_C
—
85
o_C
Notes:
1. Input overshoot voltage should be less than V_DD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.04a 10/2002
3/14
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.