PDM31564 Datasheet, PDF (6/9 Pages) List of Unclassifed Manufacturers – 256 X 16 CMOS 3.3V STATIC RAM

Read Timing Diagram
ADDRESSES
CE
OE
UB, LB
DOUT
PRELIMINARY
t_RC
t_AA
t_ACE
t_AOE
t_BA
t_LZBE(1)
t_LZOE(1)
t_LZCE(1)
t_OH
t_HZCE(1)
t_HZOE(1)
t_HZBE(1)
Output Data Valid
PDM31564
AC Electrical Characteristics
Description
-8*
-10*
–12
–15
–20
READ Cycle
READ cycle time
Address access time
Chip enable access time
Byte access time
Output hold from address change
Byte disable to output in low-Z⁽¹⁾
Byte enable to output in high-Z⁽¹⁾
Chip enable to output in low-Z⁽¹⁾
Chip disable to output high-Z^{(1, 2)}
Output enable access time
Output enable to output in low-Z⁽¹⁾
Output disable to output in high-Z^{(1, 2)}
Symbol Min Max Min Max Min Max Min Max Min Max Unit
t_RC
8
– 10 – 12 — 15 — 20 — ns
t_AA
–
8
– 10 — 12 — 15 — 20 ns
t_ACE
–
8
– 10 — 12 — 15 — 20 ns
t_BA
–
5
–
6 — 7 — 8 — 9 ns
t_OH
4
–
4
–
4 — 4 — 4 — ns
t_LZBE
0
–
0
–
0 — 0 — 0 — ns
t_HZBE
–
4
–
5 — 8 — 9 — 9 ns
t_LZCE
3
–
3
–
4 — 4 — 5 — ns
t_HZCE
–
4
–
5 — 6 — 7 — 8 ns
t_AOE
–
4
–
5 — 6 — 7 — 10 ns
t_LZOE
0
–
0
–
0 — 0 — 0 — ns
t_HZOE
–
4
–
5 — 5 — 6 — 6 ns
* V_CC = 3.3V +5%
6
Rev. 1.2 - 3/31/98