SSM2301N Datasheet, PDF (5/6 Pages) List of Unclassifed Manufacturers – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

5
I _D =-2.8A
V _DS =-6V
4
3
2
1
0
0
2
4
6
8
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
SSM2301N
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
4
7
10
13
-V _DS (V)
Fig 10. Typical Capacitance Characteristics
10
T _j =150 ^o C
1
T _j =25 ^o C
0
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 3/11/2004
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