 English |
|
|
|
|
|
|
|
| SSM2301N Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET | |||
| |||
| ◁ |
SSM2301N
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BV DSS/âT j
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
-20 -
- -0.1
-V
- V/°C
RDS(ON)
Static Drain-Source On-Resistance VGS=-5V, ID=-2.8A
- - 130 mâ¦
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-2.8V, ID=-2.0A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS= ± 8V
ID=-2.8A
VDS=-6V
VGS=-5V
VDS=-6V
ID=-1A
RG=6⦠,VGS=-5V
RD=6â¦
VGS=0V
VDS=-6V
f=1.0MHz
- - 190 mâ¦
-0.5 - - V
- 4.4 - S
- - -1 uA
- - -10 uA
- - ±100 nA
- 5.2 - nC
- 1.36 - nC
- 0.6 - nC
- 25 - ns
- 60 - ns
- 70 - ns
- 60 - ns
- 295 - pF
- 170 - pF
- 65 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25°C, IS=-1.6A, VGS=0V
Min. Typ. Max. Units
- - -1.6 A
- - -10 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t < 5 sec.
Rev.2.02 3/11/2004
www.SiliconStandard.com
2 of 6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese