CS18LV10245 Datasheet, PDF (5/15 Pages) List of Unclassifed Manufacturers – HIgh Speed Super Low Power SRAM

High Speed Super Low Power SRAM
128K-Word By 8 Bit
CS18LV10245
„ DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70^oC )
Parameter
Name
Parameter
Test Conduction
MIN TYP⁽¹⁾ MAX Unit
V_IL
Guaranteed Input Low
Voltage ⁽²⁾
-0.5
0.8
V
V_IH
Guaranteed Input High
Voltage ⁽²⁾
2.0
Vcc+0.2 V
I_IL
Input Leakage Current V_CC=MAX, V_IN=0 to V_CC
I_OL
Output Leakage
V_CC=MAX, /CE=V_IN, or
Current
/OE=V_IN , V_IO=0V to V_CC
1
uA
1
uA
V_OL
Output Low Voltage V_CC=MAX, I_OL = 2mA
0.4
V
V_OH
I_CC
Output High Voltage V_CC=MIN, I_OH = -1mA
2.4
Operating Power
/CE=V_IL, I_DQ=0mA, F=F_MAX(3)
Supply Current
V
35
mA
I_CCSB Standby Supply - TTL /CE=VIH, IDQ=0mA,
I_CCSB1 Standby Current
/CE≧V_CC-0.2V, V_IN≧
-CMOS
V_CC-0.2V or V_IN≦0.2V
1. Typical characteristics are at TA = 25^oC.
2
mA
0.3
10
uA
2. These are absolute values with respect to device ground and all overshoots due to system or tester
notice are included.
3. Fmax = 1/t_RC.
„ DATA RETENTION CHARACTERISTICS ( TA = 0 to +70^oC )
Parameter
Name
Parameter
Test Conduction
MIN TYP⁽¹⁾ MAX Unit
V_RD
V_CC for Data Retention
/CE≧V_CC-0.2V,
V_IN≧V_CC-0.2V or V_IN≦0.2V
1.5
V
I_CCDR
Data Retention Current
/CE≧V_CC-0.2V,
V_IN≧V_CC-0.2V or V_IN≦0.2V
0.2 2.0 uA
Chip Deselect to Data
T_{CDR Retention Time}
0
See Retention Waveform
ns
t_R
Operation Recovery Time
t_RC ⁽²⁾
ns
1. Vcc = 3.0V, TA = + 25^oC. 2. t_RC= Read Cycle Time.
Copyright 2004 March Chiplus Semiconductor Corp. All rights reserved. .
Rev. 1.2
P5