UL631H256 Datasheet, PDF (4/12 Pages) List of Unclassifed Manufacturers – Low Voltage SoftStore 32K x 8 nvSRAM

UL631H256
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
V_OH
V_OL
I_OH
I_OL
I_IH
I_IL
I_OHZ
I_OLZ
V_CC
= V_CCmin
I_OH
=-2 mA
I_OL
= 2 mA
V_CC
= V_CCmin
V_OH
= 2.4 V
V_OL
= 0.4 V
V_CC
= 3.6 V
V_IH
V_IL
V_CC
E or G
V_OH
V_OL
= 3.6 V
= 0V
= 3.6 V
≥ V_IH
= 3.6 V
= 0V
C-Type
K-Type
Unit
Min. Max. Min. Max.
2.4
2.4
V
0.4
0.4 V
-2
-2 mA
2
2
mA
1
1 µA
-1
-1
µA
1
1 µA
-1
-1
µA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Time^f
2 Address Access Time to Data Valid^g
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data
Valid
5 E HIGH to Output in High-Z^h
6 G HIGH to Output in High-Z^h
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Addr. Change^g
10 Chip Enable to Power Active^e
11 Chip Disable to Power Standby^{d, e}
t_AVAV
t_AVQV
t_ELQV
t_GLQV
t_EHQZ
t_GHQZ
t_ELQX
t_GLQX
t_AXQX
t_ELICCH
t_EHICCL
t_cR
t_a(A)
t_a(E)
t_a(G)
t_dis(E)
t_dis(G)
t_en(E)
t_en(G)
t_v(A)
t_PU
t_PD
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both Low.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
35
Min.
35
35
35
15
13
13
5
0
3
0
35
45
Unit
Max.
45
ns
45
ns
45
ns
20
ns
15
ns
15
ns
5
ns
0
ns
3
ns
ns
45
ns
4
April 7, 2005