WS512K32V Datasheet, PDF (3/8 Pages) List of Unclassifed Manufacturers – 512Kx32 SRAM 3.3V MODULE

WS512K32V-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Operating Temperature
TA
-55
Storage Temperature
TSTG
-65
Signal Voltage Relative to GND VG
-0.5
Junction Temperature
TJ
Supply Voltage
VCC
-0.5
Max Unit
+125
°C
+150
°C
4.6
V
150
°C
4.6
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VCC
VIH
VIL
Min
Max
Unit
3.0
3.6
V
2.2
VCC + 0.3
V
-0.3
+0.8
V
TRUTH TABLE
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H Out Disable
High Z
Active
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
OE capacitance
COE VIN = 0 V, f = 1.0 MHz
WE1-4 capacitance
HIP (PGA)
CQFP G2T/G1U
CWE VIN = 0 V, f = 1.0 MHz
CS1-4 capacitance
CCS VIN = 0 V, f = 1.0 MHz
Data I/O capacitance
CI/O VI/O = 0 V, f = 1.0 MHz
Address input capacitance CAD VIN = 0 V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
Max
50
20
20
20
20
50
Unit
pF
pF
pF
pF
pF
DC CHARACTERISTICS
(VCC = 3.3V ± 0.3V, TA = -55°C to +125°C)
Parameter
Input Leakage Current
Sym
Conditions
Min
ILI
VIN = GND to VCC
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
Operating Supply Current (x 32 Mode)
ICC x 32 CS = VIL, OE = VIH, f = 5MHz, VCC = 3.6V
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, VCC = 3.6V
Output Low Voltage
VOL
IOL = 4.0mA
Output High Voltage
VOH
IOH = -4.0mA
2.4
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.
NOTE: Contact factory for low power option.
Max
10
10
400
200
0.4
Units
µA
µA
mA
mA
V
V
3
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