STC62WV51216 Datasheet, PDF (3/9 Pages) List of Unclassifed Manufacturers – Very Low Power/Voltage CMOS SRAM

STC
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85^oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage⁽³⁾
Guaranteed Input High
Voltage⁽³⁾
TEST CONDITIONS
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
STC62WV51216
MIN. TYP. ⁽¹⁾ MAX.
UNITS
-0.5
--
0.8
V
2.0
2.2
-- ^Vcc+0.3 V
--
--
1
uA
ILO
Output Leakage Current ^{Vcc = Max, CE = VIH, or OE = VIH,}
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3.0V
--
Vcc=5.0V
--
0.4
V
VOH
Output High Voltage Vcc = Min, IOH = -1mA
Vcc=3.0V
2.4
--
--
V
Vcc=5.0V
(4)
ICC
Operating Power Supply CE = VIL,IDQ= 0mA
70ns
Current
,F = Fmax⁽²⁾
70ns
Vcc=3.0V
Vcc=5.0V
--
--
--
25
mA
--
61
ICCSB
Standby Current -TTL
CE = VIH ,I DQ = 0mA
Vcc=3.0V
--
--
1
mA
Vcc=5.0V
--
--
2
(5)
CE ≧ Vcc -0.2V,
Vcc=3.0V
--
1.5
10
ICCSB1
Standby Current- CMOS _{VIN ≧ Vcc - 0.2V or VIN≦ 0.2V Vcc=5.0V}
--
8.0 110
uA
1. Typical characteristics are at TA = 25^oC.
2. Fmax = 1/t_RC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 31mA(@3.0V) / 76mA(@5.0V) under 55ns operation.
5.IccsB1 is 5uA/55uA at Vcc=3.0V/5.0V and TA=70^oC.
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85^oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
Vcc for Data Retention
CE ≧ Vcc - 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
ICCDR ⁽³⁾
tCDR
tR
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CE ≧ Vcc - 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
See Retention Waveform
1. Vcc = 1.5V, T_A = + 25^OC
2. t_RC = Read Cycle Time
3. IccDR(Max.) is 1.3uA at TA=70^OC.
MIN. TYP. ⁽¹⁾ MAX.
1.5
--
--
--
0.8
2.5
0
--
--
TRC ⁽²⁾
--
--
UNITS
V
uA
ns
ns
„ LOW V_CC DATA RETENTION WAVEFORM ( CE Controlled )
Vcc
CE
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE ≥ Vcc - 0.2V
Vcc
tR
VIH
R0201-STC62WV51216
3
Revision 2.1
Jan. 2004