AP9452G Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – N CHANNEL ENHANCEMENT MODE POWER MOSFET

50
T _A =25 ^o C
40
4.5V
30
3.5V
20
2.5V
10
V _GS =1.5V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
65
I_D=4A
55
T _A =25 ^o C
45
35
25
1
3
5
7
9
11
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T _j =150 ^o C
1
T _j =25 ^o C
0.1
0.01
0
0.4
0.8
1.2
1.6
V _SD , Source -to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
40
T _A =150 ^o C
30
20
AP9452G
4.5V
3.5V
10
2.5V
V _GS =1.5V
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =4A
1.6
V _GS =4.5V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
0.95
0.7
0.45
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature