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| AP9452G Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP9452G
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=4A
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=4A
VGS=2.5V, ID=3A
VDS=VGS, ID=250uA
VDS=5V, ID=3A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS= ±16V
ID=4A
VDS=16V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=5V
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
20 -
-
V
- 0.03 - V/â
-
- 38 mΩ
-
- 50 mΩ
-
- 80 mΩ
0.7 - 1.5 V
- 10 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
-
6 10 nC
-
1
- nC
-
2
- nC
-
8
- ns
-
9
- ns
- 13 - ns
-
3
- ns
- 360 570 pF
- 80 - pF
- 65 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 18 - ns
- 10 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
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