VDD8616A8A Datasheet, PDF (2/9 Pages) List of Unclassifed Manufacturers – Double Data Rate SDRAM

V-Data
Double Data Rate SDRAM
VDD8616A8A
4M x 16 Bit x 4 Banks
General Description
The VDD8616A8A are four-bank Double Data
Rate(DDR) Synchronous DRAMs organized as
4,194,304 words x 16 bits x 4 banks,
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Data outputs occur at both rising edges of CK and
/CK.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
Features
•2.5V for VDDQ power supply
•SSTL_2 interface
•MRS Cycle with address key programs
-CAS Latency (2, 2.5)
-Burst Length (2,4 &8)
-Burst Type (sequential & Interleave)
•4 banks operation
•Differential clock input (CK, /CK) operation
•Double data rate interface
•Auto & Self refresh
•8192 refresh cycle
•DQM for masking
•Package:66-pins 400 mil TSOP-Type II
Ordering Information.
Part No.
VDD8608A8A-75BA
VDD8616A8A-75B
Frequency
133Mhz(7.5ns /CL=2)
133Mhz(7.5ns /CL=2.5)
Interface
SSTL_2
Package
400mil 66pin TSOPII
Pin Assignment
VD D
D Q0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
V_{D D Q}
NC
NC
V_{D D}
NC
NC
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VS S
DQ7
V S SQ
NC
DQ6
VDDQ
NC
DQ5
V S SQ
NC
DQ4
VDDQ
NC
NC
VS S Q
DQS
NC
VR E F
VS S
DM
CK
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V_{S S}
Rev 2 April, 2002
66-pin plastic TSOP II 400 mil
2