TC2696 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

TC2696
REV.2_04/12/2004
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
26 dBm
P_T
Continuous Dissipation
7.7 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
V_DS
I_D
Parameter
Drain to Source Voltage
Drain Current
Rating
8V
600 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than
300V.
TYPICAL SCATTERING PARAMETERS (T_A=25 °C)
V_DS = 8 V, I_DS = 600 mA
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
ANG
0.9232 175.28
0.9179 161.34
0.9098 148.40
0.8978 134.59
0.8806 118.62
0.8574
99.05
0.8295
74.18
0.8045
42.52
MAG
1.8019
1.2279
0.9600
0.8236
0.7599
0.7426
0.7529
0.7648
S21
ANG
58.43
38.12
19.07
0.11
-19.79
-41.79
-67.22
-97.22
S12
MAG
ANG
0.0288
-14.46
0.0303
-26.85
0.0327
-38.61
0.0364
-50.96
0.0420
-64.88
0.0496
-81.49
0.0595 -102.04
0.0701 -127.59
S22
MAG
ANG
0.6268 174.83
0.6531 167.56
0.6737 158.81
0.6847 148.28
0.6839 135.52
0.6699 119.60
0.6430
98.92
0.6085
71.06
OUTLINE DIMENSIONS (in mm)
Source
Drain
Source
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
P2/2