TC2696 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

TC2696
REV.2_04/12/2004
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
• 2 W Typical Output Power at 2.45 GHz
• 14 dB Typical Linear Power Gain at 2.45 GHz
• High Linearity:
IP3 = 43 dBm Typical at 2.45 GHz
PHOTO ENLARGEMENT
• High Power Added Efficiency:
Nominal PAE of 43 % at 2.45 GHz
• Suitable for High Reliability Application
• Breakdown Voltage:
BV_DGO ≥ 18 V
• Lg = 0.6 µm, Wg = 5 mm
• 100 % DC Tested
• Flange Ceramic Package
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT)
chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are
100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range
power amplifier for commercial applications including Cellular/PCS systems, and military high
performance power amplifier.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
P_1dB
Output Power at 1dB Gain Compression Point , f = 2.45GHz
V_DS = 8 V, I_DS = 600 mA
G_L
Linear Power Gain, f = 2.45GHz
V_DS = 8 V, I_DS = 600 mA
IP3
Intercept Point of the 3^rd-order Intermodulation, f = 2.45GHz
V_DS = 8 V, I_DS = 600 mA, *P_SCL = 20 dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 2.45GHz
I_DSS
g_m
V_P
BV_DGO
R_th
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 10 mA
Drain-Gate Breakdown Voltage at I_DGO =2.5 mA
Thermal Resistance
MIN
32.5
12
15
TYP
33
14
43
43
1.2
850
-1.7**
18
7
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
Note: * P_SCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement
(1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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