TC2571 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – 1W Low-Cost Packaged PHEMT GaAs Power FETs

TC2571
REV.2_04/12/2004
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
26 dBm
P_T
Continuous Dissipation
3.8 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
Parameter
V_DS
Drain to Source Voltage
I_D
Drain Current
HANDLING PRECAUTIONS :
Rating
8V
300 mA
The user must operate in a clean, dry environment.
Electrostatic Discharge(ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must less than 300V.
TYPICAL SCATTERING PARAMETERS (T_A=25℃)
Power Bias : V_DS = 8 V, I_DS = 300 mA
Swp Max
9GHz
3.0
45..00
10.0
-0.2
-0.4
S11
Swp Min
2GHz
Mag Max
0.2
135
150
165
-180
-165
-150
-135
0.05
Per Div
Mag Max
8
135
150
165
-180
-165
-150
-135
2
Per Div
Swp Max
9 GHz
45
30
15
0
-15
S21
-30
-45
Swp Min
2 GHz
-0.2
-0.4
Swp Max
9 GHz
45
S12
30
15
0
-15
-30
-45
Swp Min
2 GHz
Swp Max
9GHz
3.0
45..00
10.0
S22
Swp Min
2GHz
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
ANG
0.8422 179.88
0.8330 156.09
0.8128 135.66
0.7880 114.61
0.7645 90.83
0.7467 63.85
0.7247 33.82
0.7245 -5.98
S21
MAG
ANG
4.4104 55.63
3.0979 27.48
2.4617 1.60
2.1283 -23.92
1.9470 -50.89
1.8797 -79.40
1.8428 -109.44
1.7925 -146.06
S12
MAG
ANG
0.0378 4.41
0.0410 -5.11
0.0463 -13.48
0.0531 -21.93
0.0655 -35.02
0.0813 -51.82
0.1016 -73.69
0.1226 -103.34
S22
MAG
ANG
0.2968 -160.56
0.3334 -174.58
0.3617 172.88
0.3796 159.66
0.3879 145.45
0.3770 128.62
0.3550 110.31
0.3032 81.57
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science- Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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