TC2571 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 1W Low-Cost Packaged PHEMT GaAs Power FETs

TC2571
REV.2_04/12/2004
1W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
• 1W Typical Output Power at 6 GHz
• 11dB Typical Power Gain at 6 GHz
• High Linearity:
IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency:
PAE ≥ 43 % for Class A Operation
• Suitable for High Reliability Application
• Breakdown Voltage:
BV_DGO ≥ 15 V
• Lg = 0.35 µm, Wg = 2.4 mm
• 100 % DC Tested
• Low Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs
Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high
performance package. All devices are 100% DC tested to assure consistent quality. Typical applications
include high dynamic range power amplifier for commercial applications including Cellular/PCS systems,
and military high performance power amplifier.
ELECTRICAL SPECIFICATIONS (T_A=25℃)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
P_1dB
Output Power at 1dB Gain Compression Point , f = 6GHz
V_DS = 8 V, I_DS = 300 mA
29.5
30
dBm
G_1dB
Power Gain at 1dB Gain Compression , f = 6GHz
V_DS = 8 V, I_DS = 300 mA
IP3
Intercept Point of the 3^rd-order Intermodulation, f = 6GHz
V_DS = 8 V, I_DS = 300 mA, *P_SCL = 17 dBm
11
dB
40
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz
43
dB
I_DSS
g_m
V_P
BV_DGO
R_th
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 4.8 mA
Drain-Gate Breakdown Voltage at I_DGO =1.2 mA
Thermal Resistance
600
400
-1.7**
15
18
16
mA
mS
Volts
Volts
°C/W
* P_SCL : Output Power of Single Carrier Level
** For the tight control of the pinch-off voltage range, we divide TC2571 into 3 model numbers to fit customer design requirement
(1)TC2571P1519 : Vp = -1.5V to -1.9V (2)TC2571P1620 : Vp = -1.6V to -2.0V (3)TC2571P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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