TC1301 Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – Low Noise and Medium Power GaAs FETs

TC1301
REV.2_04/12/2004
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_DS
Drain Current
7.0 V
-3.0 V
I_DSS
I_GS
Gate Current
600 µA
P_in
RF Input Power, CW
P_T
Continuous Dissipation
20 dBm
800 mW
T_CH
Channel Temperature
T_STG
Storage Temperature
175 °C
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 4 V, I_DS = 50 mA
Frequency NF_opt
G_A
Γ_opt
Rn/50
MAG ANG
2
0.36
19.7
0.88
15 0.28
4
0.48
16.6
0.74
39 0.18
6
0.59
14.3
0.62
64 0.15
8
0.70
12.7
0.55
92 0.12
10
0.78
11.7
0.50 120 0.09
12
0.85
10.9
0.49 148 0.06
14
0.98
10.4
0.50 174 0.04
16
1.12
9.8
0.51 -162 0.04
18
1.27
9.0
0.54 -141 0.07
CHIP DIMENSIONS
760^± 12
D
D
D
S
G
S
G
S
G
S
290^± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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