TC1102 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – Super Low Noise GaAs FETs

TC1102
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
5V
V_GS
Gate-Source Voltage
-3.0 V
I_DS
Drain Current
I_DSS
I_GS
Gate Current
160 µA
P_in
RF Input Power, CW
14 dBm
P_T
Continuous Dissipation
150 mW
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 2 V, I_DS = 10 mA
Frequency
(GHz)
NF_opt
(dB)
G_A
(dB)
Γ_opt
MAG ANG
Rn/50
2
0.30
19.0
0.98
15 0.40
4
0.32
17.4
0.84
30 0.35
6
0.34
15.7
0.68
50 0.26
8
0.37
14.3
0.51
76 0.19
10
0.42
12.9
0.38 107 0.12
12
0.47
11.9
0.28 146 0.08
14
0.56
11.4
0.25 193 0.07
16
0.70
11.2
0.32 250 0.11
18
0.87
10.9
0.49 317 0.23
CHIP DIMENSIONS
280 ± 12
D
S
S
G
250 ± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 55 x 60
Drain Pad: 55 x 60
Source Pad: 55 x 14
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science- Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
10