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SW50N06.pdf Datasheet, PDF (2/6 Pages) –
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SAMWIN
SW50N06
Electrical Characteristics (Tc=25 unless otherwise noted)
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS/
Tj
Drain- Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
IDSS
Drain-Source Leakage Current
Gate-Source Leakage Current
IGSS
Gate-Source Leakage Reverse
On Characteristics
VGS=0V,ID=250uA
ID=250uA,referenced to 25
VDS=60V, VGS=0V
VDS=48V, Tc=125
VGS=20V,VDS=0V
VGS=-20V, VDS=0V
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-state
Resistance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge (Miller Charge)
VDS=VGS,ID=250uA
VGS=10V,ID=25A
VGS=0V,VDS=25V, f=1MHz
VDD=30V,ID=25A
RG=50ohm
(Note4,5)
VDS=48V,VGS=10V, ID=50A
(Note4,5)
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
ISM
Pulsed Source Current
Integral Reverse
p-n Junction Diode
in the MOSFET
Min
60
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
Value
Units
Typ Max
-
-
V
0.07
-
V/
-
1
uA
-
100
nA
-
-100
nA
-
4.0
V
0.018
0.023
ohm
900
1220
430
550
pF
80
100
40
60
100
200
90
180
ns
80
160
30
40
9.6
-
nc
10
-
Typ.
-
-
Max.
50
200
Unit.
A
VSD
Diode Forward Voltage
IS=50A,VGS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=50A,VGS=0V,
dIF/dt=100A/us
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH,IAS=50A,VDD=25V,RG=0ohm, Starting TJ=25
3. ISD 50A,di/dt 300A/us,VDD BVDSS, Starting TJ=25
4. Pulse Test: Pulse Width 300us,Duty Cycle 2%
5. Essentially independent of operating temperature.
2/6
REV2.1
-
-
1.5
V
-
54
-
ns
-
81
-
uc
05.07.21
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