SW50N06.pdf Datasheet, PDF (1/6 Pages) –

SAMWIN
SW50N06
Features
N-Channel MOSFET
BV_DSS (Minimum)
R_DS(ON) (Maximum)
I_D
Qg (Typical)
P_D (@TC=25 )
: 60 V
: 0.023ohm
: 50 A
: 30 nc
: 130 W
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS process, planar stripe. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half
bridge or full bridge resonant topology like a electronic
ballast, and also low power switching mode power
appliances.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
Drain to Source Voltage
Continuous Drain Current (@Tc=25 )
Continuous Drain Current (@Tc=100 )
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Total Power Dissipation (@Tc=25 )
P_D
Derating Factor above 25
T_STG,T_J
T_L
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Value
60
50
35
200
±20
480
13
7
130
0.9
-55 ~ +150
300
Thermal Characteristics
Symbol
R _JC
R _CS
R _JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
Typ
Max
-
-
1.15
-
0.5
-
-
-
62.5
1/6
REV2.1
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
05.07.21