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| SSM40N03P Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – N CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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SSM40N03P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BV DSS/â Tj
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
30 -
-
V
- 0.037 - V/°C
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=20A
- 14 17 mâ¦
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=30V, VGS=0V
VDS=24V,VGS=0V
VGS= ± 20V
ID=20A
VDS=24V
VGS=5V
VDS=15V
ID=20A
RG=3.3⦠,VGS=10V
RD=0.75â¦
VGS=0V
VDS=25V
f=1.0MHz
- 20 23 mâ¦
1
-
3
V
- 26 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 17 - nC
-
3
- nC
- 10 - nC
- 7.2 - ns
- 60 - ns
- 22.5 - ns
- 10 - ns
- 800 - pF
- 380 - pF
- 133 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25°C, IS=40A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Min. Typ. Max. Units
-
- 40 A
-
- 169 A
-
- 1.3 V
Rev.2.01 7/01/2004
www.SiliconStandard.com
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