SSM40N03P Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM40N03P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate charge
Simple drive requirement
Fast switching
Description
G
DS
TO-220
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial and
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits.
BV_DSS
R _DS(ON)
I_D
G
30V
17mΩ
40A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_C=25°C
I_D @ T_C=100°C
I_DM
P_D @ T_C=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
± 20
40
30
169
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
2.5
62
Unit
°C/W
°C/W
Rev.2.01 7/01/2004
www.SiliconStandard.com
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