MSK4300 Datasheet, PDF (2/5 Pages) M.S. Kennedy Corporation – 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE

ABSOLUTE MAXIMUM RATINGS
V+
High Voltage Supply 75V ○
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V _{Bias Supply 16V} BIAS
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VIND _{Logic Input Voltages ○ ○ ○ ○ -0.3V to VBIAS +0.3V}
IOUT
IPK
Continuous Output Current
10A
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Peak Output Current 25A ○
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ELECTRICAL SPECIFICATIONS
θJC
Thermal Resistance
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○ 9°C/W
TST
Storage Temperature Range
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○ -○ 65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○+300°C
(10 Seconds)
TC Case Operating Temperature ○ ○ -55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○+150°C
Parameter
Test Conditions
GroupA 4
Subgroup
CONTROL SECTION
VBIAS Quiescent Current
All Inputs Off
1,2,3
VBIAS Operating Current
f=20KHz, 50% Duty Cycle 1,2,3
Undervoltage Threshold (Falling)
1
Undervoltage Threshold (Rising)
1
Low Level Input Voltage 1
-
High Level Input Voltage 1
-
Low Level Input Current 1
VIN=0V
-
High Level Input Current 1
VIN=5V
-
OUTPUT BRIDGE
Drain-Source Breakdown Voltage 1 ID=25µA, All Inputs Off
-
Drain-Source Leakage Current 1
VDS=70V
-
Drain-Source On Resistance (Each FET)
ID=10A
1
Drain-Source On Resistance 1
-
(Each FET, For Thermal Calculations Only)
SWITCHING CHARACTERISTICS
Rise Time 1
V+=30V, RL=3Ω
-
Fall Time 1
Turn-On Prop Delay (Lower)
Turn-Off Prop Delay (Lower)
Turn-On Prop Delay (Upper)
Turn-Off Prop Delay (Upper)
Dead Time
ID=10A
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SWR Resistor=∞
4
SWR Resistor=∞
4
SWR Resistor=∞
4
SWR Resistor=∞
4
SWR =∞
4
Dead Time
SWR=12K
4
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
1
ISD=10A
-
Reverse Recovery Time 1
ISD=10A, di/dt=100A/µS
-
MSK 4300H 3
Min. Typ. Max.
2.5
8
12.5
15
5.75 6.6
7.5
6.2
7.1
8.0
-
-
0.8
2.7
-
-
60
100 135
-1
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+1
70
-
-
-
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25
-
-
0.300
-
-
0.16
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5
-
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6
-
-
0.5
2
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5
8
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5
8
-
0.5
2
6.0
7.0
8.0
0.3
0.5
0.7
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1.05 1.25
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75
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MSK 4300 2
Units
Min. Typ. Max.
5.75
6.2
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2.7
60
-1
2.5
12.5
6.6
7.1
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100
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8 ^mAmp
15 ^mAmp
7.5 ^Volts
8.0 ^Volts
0.8 ^Volts
- ^Volts
135 ^µAmp
+1 ^µAmp
70
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-
V
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25 ^µAmp
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-
0.300 ^Ω
-
-
0.16
Ω
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5
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nSec
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6
-
nSec
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0.5
3 ^µSec
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5
10 ^µSec
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5
10 ^µSec
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0.5
3 ^µSec
6.0
7.0
8.0 ^µSec
0.3
0.5
0.7 ^µSec
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1.05 1.25 ^Volts
-
75
-
nSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
2
Rev. C 6/00