M13S128168A Datasheet, PDF (2/48 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
DDR SDRAM
Features
M13S128168A
2M x 16 Bit x 4 Banks
Double Data Rate SDRAM
JEDEC Standard
Internal pipelined double-data-rate architecture, two data access per clock cycle
Bi-directional data strobe (DQS)
On-chip DLL
Differential clock inputs (CLK and CLK )
DLL aligns DQ and DQS transition with CLK transition
Quad bank operation
CAS Latency : 3
Burst Type : Sequential and Interleave
Burst Length : 2, 4, 8
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)
Data I/O transitions on both edges of data strobe (DQS)
DQS is edge-aligned with data for reads; center-aligned with data for WRITE
Data mask (DM) for write masking only
V_DD = 2.375V ~ 2.75V, V_DDQ = 2.375V ~ 2.75V
Auto & Self refresh
15.6us refresh interval (64ms refresh period, 4K cycle)
SSTL-2 I/O interface
66pin TSOPII package
Ordering information :
PRODUCT NO.
M13S128168A -5TG
M13S128168A -6TG
MAX FREQ
200MHz
166MHz
VDD
2.5V
PACKAGE
TSOPII
COMMENTS
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2006
Revision : 1.5
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