IRF830 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830
Electrical Characteristics ( T_C = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
V_(BR)DSS
V_(BR)DSS /
∆T_J
I_D(ON)
R_DS(ON)
V_GS(TH)
g_fs
Drain-to-source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
On-State Drain Current
(note 2)
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
V_GS = 0V, I_D = 250µA
500
Reference to 25°C,
I_D = 1mA
-
V_GS > I_D(ON) x R_DS(ON)Max
V_GS =10V, I_D = 2.7A
(note 4)
V_DS = V_GS, I_D = 250µA
2.0
V_DS = 50V, I_D = 2.7A
2.5
I_DSS
I_GSS
Q_g
Q_qs
Q_gd
t_{d ( on)}
T_r
t_{d (off)}
T_f
L_D
L_S
C_iss
C_oss
C_rss
Drain-to-Source Leakage
Current
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
V_DS = 500V, V_GS = 0V
V_DS = 400V, V_GS = 0V,
-
T_C= 125°C
V_GS = 20V
-
V_G = -20V
Total Gate Charge
I_D =3.1A
-
Gate-to-Source Charge
V_DS = 400V
-
Gate-to-Drain (“Miller”)
Charge
V_GS = 10V (note 4)
Turn-On Delay Time
Rise Time
Turn -Off Delay Time
Fall Time
Internal Drain Inductance
V_DD = 250V
-
I_D = 3.1.1A
-
R_G = 12Ω
-
R_D = 79Ω (note 4)
-
Between lead 6mm (0.25in.)
from package and center or die
-
Internal Source Inductance
contact
-
Input Capacitance
V_GS = 0V
-
Output Capacitance
V_DS = 25V
-
Reverse Transfer Capacitance
F = 1.0MHZ
-
Typ
0.61
-
-
-
-
-
-
8.2
16
42
16
4.5
7.5
610
160
68
Max
-
4.5
1.5
4.0
-
25
250
100
-100
38
5.0
22
-
-
-
-
-
-
-
-
-
Units
V
V/°C
A
Ω
V
S
µA
nA
nC
ns
nH
pF
Source-Drain Rating Characteristics
Symbol Parameter
Conditions
Min Typ Max Units
I_S
Continuous Source Current
(Body Diode)
MOSFET symbol showing the
integral reverse p-n junction
-
- 4.5
A
I_SM
Pulsed Source Current
(Body Diode) (Note 1)
diode.
-
- 18
V_SD
Diode Forward Voltage (note 4) T_J=25^°C_, I_S=2.5A,V_GS=DV
t_rr
Reverse Recovery Time
T_J=25^°C, I_F=2.1A
-
- 1.6
V
- 320 640
ns
Q_rr
Reverse Recovery Charge
di/dt=100A/µs (Note 4)
- 1.0 2.0
µC
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by (L_S+L_D)
Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.
2. VDD = 50V, starting Tj = 25°C, L = 24 mH RG = 25Ω, IAS = 4.5A
3. ISD ≤ 4.5A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C
4. Pulse with ≤ 300µs; duty cycle ≤ 2%
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone]
www.baylinear.com