IRF830 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

Bay Linear
Linear Excellence
POWER MOSFET
IRF830
Advance Information
Description
The Bay Linear MOSFET’s provide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D² surface
mount power package with a power dissipation up to 2 Watts
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
V_DSS = 500V
R_{DS (ON)} = 1.5 Ω
I_D = 4.5A
Ordering Information
Device
Package
IRL830T
IRL830S
TO-220
TO-263 ( D² )
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Parameter
I_D@ T_C =25°C
I_D@ T_C =100°C
I_DM
P_D @ T_C =25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J, T_STG
Continuous Drain Current, V_GS @10V
Continuous Drain Current, V_GS @10V
Pulsed Drain Current (1)
Power Dissipation
Linear Derating Factor
Linear Derating Factor ( PCB Mount, D² ) (1)
Gate-to- Source Voltage
Single Pulse Avalanche Energy (2)
Avalanche Current (1)
Repetitive Avalanche Energy (1)
Peak Diode Recovery dv/dt (3)
Junction & Storage Temperature Range
Soldering Temperature, for 10 seconds
Max
4.5
2.9
18
74
0.59
0.025
±20
280
4.5
7.4
3.5
−55 to +150
300 (1.6mm from case)
Unit
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJC
Junction-to Case
R_θCS
Case-to-Sink, Flat, Greased Surface ( TO-220)
R_θJA
Junction-to Ambient ( PCB Mount, D² )
R_θJA
Junction-to Ambient
Min
-
-
-
Typ
-
0.50
-
Max
1.7
40
62
Units
°C/W
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone]
www.baylinear.com