EESX1109 Datasheet, PDF (2/9 Pages) List of Unclassifed Manufacturers – Ultra-Compact Photomicrosensors with Surface-Mount Design

EE-SX1107/1108/1109/1131
EE-SX1107/1108/1109/1131
Specifications
s ABSOLUTE MAXIMUM RATING (T_A=25°C)
Item
Emitter
Detector
Ambient temperature
Forward current
Pulse forward current
Reverse voltage
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector dissipation
Operating
Storage
Soldering (manual)
Soldering (reflow)
Symbol
I_F
I_FP
V_R
V_CEO
V_ECO
I_C
P_C
Topr
Tstg
Tsol
Tsol
Rated value
25 mA (see note)
100 mA (duty: 1/100, pulse width: 0.1 ms)
5V
20 V
5V
20 mA
75 mW (see note)
-30° to 85°C
-40° to 90°C
300°C (3 second max.)
240°C (10 second max)
Note: Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
s CHARACTERISTICS (T_A=25°C)
Item
Emitter
Detector
Combination
Forward voltage
Reverse current
Peak emission wavelength
Dark current
Peak spectral sensitivity
wavelength
Light current (collector-current)
Collector-emitter
saturation voltage
Rising time
Falling time
Symbol
V_F
I_R
λ_P(L)
I_D
λ_P(P)
Value
1.1 V typ., 1.3 V max.
10 µA max.
940 nm typ.
100 nA max.
900 nm typ.
I_L
V_CE (sat)
50 µA min., 150 µA typ.,
500 µA max.
0.1 V typ., 0.4 V max.
tr
10 µs typ. (see note)
tf
10 µs typ. (see note)
Note: The following figures show the rising time (tr) and falling time (tf).
Condition
I_F = 5 mA
V_R = 5 V
I_F = 20 mA
V_CE = 10 V, 0 lx
—
I_F = 5 mA, V_CE = 5 V
I_F = 20 mA, I_L = 50 µA
V_CC = 5 V, R_L = 1KΩ
I_L = 100 µA
Input
90%
Output
10%
tr
Input
t
tf
t
I_L
V_CC
Output
R_L
2