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CMT70N03 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N CHANNEL LOGIC LEVEL POWER MOSFET
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ORDERING INFORMATION
Part Number
CMT70N03
CMT70N03
N-CHANNEL Logic Level Power MOSFET
Package
TO-252
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
Characteristic
Symbol
OFF Characteristics
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 µA)
Breakdown Voltage Temperature Coefficient,
(Reference to 25℃, ID = 1mA)
VDSS
ΔVDSS/∆TJ
Drain-to-Source Leakage Current
IDSS
(VDS = 30 V, VGS = 0 V, TJ = 25℃)
(VDS = 24 V, VGS = 0 V, TJ = 125℃)
Gate-to-Source Forward Leakage
IGSS
(VGS = 20 V)
Gate-to-Source Reverse Leakage
IGSS
(VGS = -20 V)
ON Characteristics
Gate Threshold Voltage,
(VDS = VGS, ID = 250 µA)
VGS(th)
Static Drain-to-Source On-Resistance,
(VGS = 10 V, ID = 15A)
(VGS = 4.5 V, ID = 12A)
(Note 5)
RDS(on)
Forward Transconductance (VDS = 20V, ID = 12A) (Note 5)
gFS
Dynamic Characteristics
Input Capacitance
Output Capacitance
(VDS = 15 V, VGS = 0 V,
Ciss
f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge (VGS = 10 V)
Qg
Total Gate Charge (VGS = 4.5 V)
(VDS = 15 V, ID = 12 A) (Note5, 6)
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain Charge
Qgd
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 15 V, ID = 15 A,
VGS = 10 V, RG = TBDΩ)
(Note 5,6)
td(on)
tr
td(off)
tf
Source-Drain Diode Characteristics
Continuous Source Current (Body
IS
Diode )
Integral pn-diode in MOSFET(Note 2)
Pulse Source Current (Body Diode)
ISM
Forward On-Voltage
(IS = 12 A, VGS = 0 V)
VSD
Forward Turn-On Time
Reverse Recovery Charge
(IF = 12 A, VGS = 0 V,
trr
di/dt = 100A/µs) (Note 5)
Qrr
CMT70N03
Min
Typ
Max
30
0.05
1
10
100
-100
1.0
3.0
6.6
8.0
12
30
2600
480
230
50
25
7.5
8.5
TBD
TBD
TBD
TBD
71
284
1.0
30
40
Units
V
V/℃
µA
nA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
2004/04/13
Champion Microelectronic Corporation
Page 2
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