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CMT70N03 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N CHANNEL LOGIC LEVEL POWER MOSFET
APPLICATION
Buck Converter High Side Switch
Other Applications
VDSS
30V
RDS(ON) Typ.
6.6mΩ
PIN CONFIGURATION
TO-252
Front View
CMT70N03
N-CHANNEL Logic Level Power MOSFET
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
ID
Inductive Switching Curves
71A
Improved UIS Ruggedness
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current - Continuous Tc = 25℃, VGS@10V (Note 2)
- Continuous Tc = 100℃, VGS@10V (Note 2)
- Pulsed Tc = 25℃, VGS@10V (Note 3)
Gate-to-Source Voltage - Continue
Total Power Dissipation
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Symbol
VDSS
ID
ID
IDM
VGS
PD
dv/dt
TJ, TSTG
EAS
TL
TPKG
Value
30
71
45
284
±20
66
0.53
3.0
-55 to 150
TBD
300
260
Unit
V
A
V
W
W/℃
V/ns
℃
mJ
℃
℃
THERMAL RESISTANCE
Symbol
Parameter
RθJC
Junction-to-case
Min Typ
RθJA
Junction-to-ambient
(PCB Mount)
RθJA
Junction-to-ambient
Max
1.9
50
62
Units
℃/W
℃/W
℃/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +150℃
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2004/04/13
Champion Microelectronic Corporation
Page 1