AO3415 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO3415, AO3415L
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=-250µA, V_GS=0V
-20
I_DSS
Zero Gate Voltage Drain Current
V_DS=-16V, V_GS=0V
T_J=55°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±4.5V
V_DS=0V, V_GS=±8V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=-250µA
-0.3
I_D(ON)
On state drain current
V_GS=-4.5V, V_DS=-5V
-25
V_GS=-4.5V, I_D=-4A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=-2.5V, I_D=-4A
T_J=125°C
V_GS=-1.8V, I_D=-2A
g_FS
Forward Transconductance
V_DS=-5V, I_D=-4A
8
V_SD
Diode Forward Voltage
I_S=-1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-10V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Total Gate Charge
Q_gs
Gate Source Charge
V_GS=-4.5V, V_DS=-10V, I_D=-4A
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
t_D(off)
Turn-On Rise Time
Turn-Off DelayTime
V_GS=-4.5V, V_DS=-10V, R_L=2.5Ω,
R_GEN=3Ω
t_f
Turn-Off Fall Time
t_rr
Body Diode Reverse Recovery Time ^IF^{=-4A, dI/dt=100A/µs}
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=-4A, dI/dt=100A/µs}
Typ
-0.55
35
48
45
56
16
-0.78
1450
205
160
6.5
17.2
1.3
4.5
9.5
17
94
35
31
13.8
Max Units
V
-1
µA
-5
±1
µA
±10 ^µA
-1
A
43
mΩ
60
54 ^mΩ
73 ^mΩ
S
-1
V
-2.2 A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.