AO3415 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

Rev 3: May 2004
AO3415
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3415 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3415 is Pb-free
(meets ROHS & Sony 259 specifications). AO3415L
is a Green Product ordering option. AO3415 and
AO3415L are electrically identical.
Features
V_DS (V) = -20V
I_D = -4 A
R_DS(ON) < 43mΩ (V_GS = -4.5V)
R_DS(ON) < 54mΩ (V_GS = -2.5V)
R_DS(ON) < 73mΩ (V_GS = -1.8V)
ESD Rating: 3000V HBM
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±8
-4.0
-3.5
-30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
65
85
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.