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AO3410 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor
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AO3410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
VGS=10V, ID=5.8A
TJ=125°C
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=3A
gFS
Forward Transconductance
VDS=5V, ID=5A
12
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=4.5V, VDS=15V, ID=5.8A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.7Ω,
tD(off)
Turn-Off DelayTime
RGEN=6Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Typ
0.8
23
29
26
35
54
17
0.66
767
111
82
1.3
10
1.2
3.1
5
5.5
39
4.7
15
7.1
Max Units
V
1
µA
5
100 nA
1
V
A
28
mΩ
39
33 mΩ
42 mΩ
72 mΩ
S
1
V
2.5
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.