AO3410 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

August 2002
AO3410
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3410 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V and as
high as 12V. This device is suitable for use as a load
switch or in PWM applications.
Features
V_DS (V) = 30V
I_D = 5.8 A
R_DS(ON) < 28mΩ (V_GS = 10V)
R_DS(ON) < 33mΩ (V_GS = 4.5V)
R_DS(ON) < 52mΩ (V_GS = 2.5V)
R_DS(ON) < 70mΩ (V_GS = 1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
5.8
4.9
30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
65
85
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.