NT256D64S88ABG Datasheet, PDF (12/15 Pages) List of Unclassifed Manufacturers – 184pin One Bank Unbuffered DDR SDRAM MODULE

NT256D64S88ABG
256MB : 32M x 64
PC2700 Unbuffered DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
(TA = 0 °C ~ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
Symbol
tIPW
tRPRE
tRPST
tRAS
tRC
tRFC
tRCD
tRAP
tRP
tRRD
tWR
tDAL
tWTR
tXSNR
tXSRD
tREFI
Parameter
Input pulse width
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command period
Auto-refresh to Active/Auto-refresh command
period
Active to Read or Write delay
Active to Read Command with Auto-precharge
Precharge command period
Active bank A to Active bank B command
Write recovery time
Auto precharge write recovery + recharge time
Internal write to read command delay
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
-6
Unit
Min.
Max.
2.2
ns
0.9
1.1
tCK
0.40
0.60
tCK
42
120,000 ns
60
ns
72
ns
18
ns
18
ns
18
ns
12
ns
15
ns
(tWR/tCK) +
tCK
(tRP/tCK)
1
tCK
75
ns
200
tCK
7.8
µs
Notes
2-4, 12
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4, 13
1-4
1-4
1-4
1-4, 8
REV 1.1
08/2002
12
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.