AS29LV400 Datasheet, PDF (11/26 Pages) Alliance Semiconductor Corporation – 3V 512K x 8/256K × 16 CMOS Flash EEPROM

March 2001
Automated on-chip programming algorithm
START
Write program command sequence
(see below)
DATA polling or toggle bit
successfully completed
Increment
address
Last
NO
address?
YES
Programming completed
AS29LV400
®
Automated on-chip erase algorithm
START
Write erase command sequence
(see below)
DATA polling or toggle bit
successfully completed
Erase complete
Chip erase command sequence
×16 mode (address/data):
555h/AAh
Individual sector/multiple sector
erase command sequence
×16 mode (address/data):
555h/AAh
2AAh/55h
2AAh/55h
555h/80h
555h/80h
Program command sequence
×16 mode (address/data):
555h/AAh
2AAh/55h
555h/A0h
Program address/program data
555h/AAh
2AAh/55h
555h/10h
555h/AAh
2AAh/55h
Sector address/30h
Sector address/30h
Sector address/30h
3/20/01; V.0.9.3
optional sector erase commands
† _{The system software should check the status of DQ3 prior to and following each}
subsequent sector erase command to ensure command completion. The device may
not have accepted the command if DQ3 is high on second status check.
Alliance Semiconductor
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