AN957 Datasheet, PDF (11/13 Pages) List of Unclassifed Manufacturers – Measuring HEXFETCharacteristics

Index
AN-957 (v.Int)
POSITION
1
MEASUREMENT
I_GSS
2
R_DS(on)
3
B_VDSS / I_DSS / V_DS
4
V_GS(th)
COMMENT
C sense disconnected, Drain Source S/C connected, Collector Voltage applied to
gate via 330Ω resistor. Note: Gate protected by back to back 30V zeners.
Collector Voltage applied to DrainBased Voltage applied to Gate via 330Ω resistor.
Collector Voltage applied to Drain, Gate Source S/C connected via 330Ω resistor.
Collector Voltage applied to Drain, Gate Drain S/C connected via 330Ω resistor.
Related topics:
Parameter definition in IGBTs
Gate Charge
Thermal characteristics
ESD sensitivity
ESD test methods
To Order