AN957 Datasheet, PDF (10/13 Pages) List of Unclassifed Manufacturers – Measuring HEXFETCharacteristics

Q_g = (t₃ - t₀) i_g,
Q_gd = (t₂ - t₁) i_g,
Q_gs = Q_g - Q_gd
V_SD Body-Drain Diode Voltage Drop
The current source may consist or a voltage
source and a series resistor, as shown in Figure
24.
The voltage should be applied in short pulses
(less than 300 microsec) with a low duty cycle
(less than 2%).
Index
D
AN-957 (v.Int)
G
1.5mA
S
I_{D VDS ≤ 0.8 x 200V}
OSCILLOSCOPE
Figure 22. Test circuit for gate charge
t_rr, Q_rr Body-Drain Diode Reverse Recovery Time and Reverse Recovery Charge
Several test circuits are commonly used to charac-terize these parameters. Some have been qualified by JEDEC. The data sheet
indicates the test method used for the specific device.
V_GS
S
10V
OSCILLOSCOPE
G
V₂
V₁
or DVM
I_S
D
t₀
t₁
t₂ t₃
t
Figure 23. Gate charge waveforms
Figure 24. Test circuit MOSFET diode drop
12. A fixture to speed-up
testing time
The most commonly tested
parameters in a MOS-
gated transistor are gate-
source leakage (I_GSS),
drain-source resistance
(R_DS(on)),
breakdown
voltage (BV_DSS), drain
current (I_DSS), source-
drain voltage (V_SD),
threshold (V_GS(th)), and so
on. These tests can be
greatly simplifyed with the
fixture shown in Figure25.
1
TO CURVE TRACER
2
3
C
4
1
C_SENSE
2
B
3
4
E_SENSE
1
E
2
3
4
TO PVT
330Ω
G
D_SENSE
30V
30V _SSENSE
S
To Order
Figure 25. Test fixture for HEXFET test