SA25C512 Datasheet, PDF (1/19 Pages) List of Unclassifed Manufacturers – 512Kb EEPROM SPI with 10MHz and Low Standby

Features
•= Saifun NROM™ Flash Cell
•= Serial Peripheral Interface (SPI) Compatible
•= Supports SPI Modes 0 (0,0) and 3 (1,1)
•= Byte and Page Write Modes (up to 128 bytes)
•=
Single Supply Voltage:
– 2.7V to 3.6V (L)
– 4.5V to 5.5V (H)
•= 10MHz Clock Rate
– •= Block Write Protection:
Protect ¼, ½, or Entire Array
•= Write Protect Pin and Write Disable Instructions of both Hardware and
Software Data Protection
•= Self-timed Write Cycle (10mS max)
•= 100,000 Write Cycles (Minimum)
•= 20 Year Data Retention
•= Low-power Standby Current (less than 1µA)
•= 8-SOIC Narrow Package (0.150” Wide Body, JEDEC SOIC)
•=
Temperature Range:
– Industrial: -40°C to +85°C
– Commercial: 0°C to +70°C
SA25C512
Data Sheet
512Kb EEPROM SPI
with 10MHz and
Low Standby
General Description
SA25C512 is a 512Kb CMOS non-volatile serial EEPROM,
organized as a 64K x 8-bit memory. The SA25C512 is
available in a space-saving, 8-lead narrow SOIC package. In
addition, it is available in a wide range of voltages – 2.7-3.6 V
and 4.5-5.5 V.
The SA25C512 is enabled through the Chip Select (CSb) pin
and is accessed via a 3-wire interface consisting of Serial Data
Input (SI), Serial Data Output (SO) and Serial Data Clock
(SCK). All write cycles are completely self-timed, and no
separate ERASE cycle is required before write.
(continued)
http://www.saifun.com
Saifun NROM^TM is a trademark of Saifun Semiconductors Ltd.
This Data Sheet states Saifun's current technical specifications regarding the Products described herein. This Data Sheet
may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 1909 Rev: 1.1 Amendment: 1
Issue Date: January 27, 2003