E3205 Datasheet, PDF (3/3 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET

E 3205
HEXFET^® Power MOSFET
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM _{(Body Diode) â‘} 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-on Time
Min. Typ. Max. Units
Test Conditions
._—
._—
—
110
— 390
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
—
—
1.3
V TJ=25ْC,IS=62A,VGS=0V ④
—
69 104 nS TJ=25ْC,IF=52A
—
143 215
μC ^{di/dt=100A/μs ④}
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
1.Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
2.Starting TJ = 25°C, L = 138μH
RG = 25Ω, IAS = 62A. (See Figure 12)
3. ISD ≤ 62A, di/dt ≤ 207A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
4.Pulse width δ 400μs; duty cycle δ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise
specified)
5.Calculated continuous current based on maximum
allowable
junction temperature. Package limitation current is 75A.
6.This is a typical value at device destruction and
represents
operation outside rated limits.
7.This is a calculated value limited to TJ = 175°C.
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