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E3205 Datasheet, PDF (1/3 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
E 3205
HEXFET® Power MOSFET
VDSS = 54 V
ID25 = 110A
RDS(ON) = 0.009 Ω
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC =
100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current ①
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
IAR
Avalanche Current①
EAR
Repetitive Avalanche Energy①
dv/dt
Peak Diode Recovery dv/dt . ③
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
110
80
390
150
1.3
± 20
62
20
5.0
-55 to + 175
300 (1.6mm from
case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
1