E1010 Datasheet, PDF (3/3 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET

E 1010
HEXFET^® Power MOSFET
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current .
IS
—
(Body Diode)
Pulsed Source Current
ISM _{(Body Diode) â‘} 
._—
—
84
— 330
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
—
—
1.3
V TJ=25ْC,IS=50A,VGS=0V ④
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
—
73
110
nS TJ=25ْC,IF=50A
—
220 330
μC ^{di/dt=100A/μs ④}
ton Forward Turn-on Time
Intrinsic turn-on time is neglegible (turn-on is dominated by Ls + LD)
Notes:
1. Repetitive rating; pulse width limited by
max. junction temperature.
2. Starting TJ = 25°C, L = 260μH
RG = 25W, IAS = 50A, VGS =10V
3. ISD≤50A, di/dt≤230A/μs, VDD≤V(BR)DSS,
TJ≤175°C
4. Pulse width≤400μs; duty cycle ≤2%.
5. This is a typical value at device destruction and
represents
operation outside rated limits.
6. This is a calculated value limited to TJ = 175°C .
7.Calculated continuous current based on
maximum allowable
junction temperature. Package limitation current is
75A.
3