E1010 Datasheet, PDF (2/3 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET

Thermal Resistance
E 1010
HEXFET^® Power MOSFET
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 — — V VGS=0V,ID=250uA
△V(BR)DSS/△TJ Breakdown Voltage Temp. Coefficient — 0.064 — V/ْC Reference to 25ْC,ID=1mA
RDS(on) Static Drain-to-Source On-Resistance — — 13 mΩ VGS=10V,ID=50A ④
VGS(th) Gate Threshold Voltage
2.0 — 4.0 V VDS=VGS, ID=250μA
gfs
Forward Transconductance
20 — — S VDS=25V,ID=50A ④
IDSS
Drain-to-Source Leakage current
— — 25 _μA VDS=60V,VGS=0V
— — 250
VDS=48V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
IGSS
Gate-to-Source Reverse leakage
— — 100
VGS=20V
nA
— — -100
VGS=-20V
Qg
Total Gate Charge
— — 130
ID=50A
Qgs
Gate-to-Source charge
— — 28 nC VDS=48V
Qgd
Gate-to-Drain ("Miller") charge
— — 44
VGS=10V See Fig.6 and 13④
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 12 —
VDD=30V
— 78 —
ID=50A
— 48 — ^{nS RG=3.6Ω}
— 53 —
VGS =10V See Figure 10④
LD
Internal Drain Inductance
— 4.5 —
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
— 7.5 —
and center of
die contact
Ciss
Input Capacitance
— 3210 —
VGS=0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
— 690 — pF ^VDS=25V
— 140 —
f=1.0MHZ See Figure 5
EAS
Single Pulse Avalanche Energy.
— 1180 320 mJ IAS = 50A, L = 260μH
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