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E75N075 Datasheet, PDF (2/2 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET | |||
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E 75N075
HEXFET® Power MOSFET
Electrical Characteristics @TJ=25 °٠C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 75 â â V VGS=0V,ID=250uA
â³V(BR)DSS/
â³TJ
Breakdown Voltage Temp. Coefficient â 0.074
â V/°C Reference to 25°C,ID=1mA
RDS(on)
Static Drain-to-Source On-resistance â â 13.0 mΩ VGS=10V,ID=40A â¤
VGS(th)
Gate Threshold Voltage
2.0 â 4.0 V VDS=VGS, ID=250μA
gfs
Forward Transconductance
20 â
â S VDS=25V,ID=40A â¤
IDSS
Drain-to-Source Leakage current
ââ
25 μA VDS=75V,VGS=0V
â â 250
VDS=60V,VGS=0V,TJ=150°C
Gate-to-Source Forward leakage
â â 100
VGS=20V
IGSS
Gate-to-Source Reverse leakage
nA
â â -100
VGS=-20V
Qg
Total Gate Charge
â â 160
ID=40A
Qgs
Gate-to-Source charge
â â 29 nC VDS=60V
Qgd
Gate-to-Drain ("Miller") charge
â â 55
VGS=10V See Fig.6 and 13â¤
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
â 13
â 64
â 49
â 48
â
VDD=38V
â
ID=40A
â nS RG=2.5Ωã
â
VGS=10V See Figure 10â¤
LD
Internal Drain Inductance
â 4.5 â
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
â 7.5 â
and center of
die contact
Ciss
Input Capacitance
â 3820 â
VGS=0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
â 610
â 130
â pF VDS=25V
â
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current . â
(Body Diode)
Pulsed Source Current
ISM
(Body Diode) â¡
.â
â
75
â 300
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
â
â
1.3
V TJ=25°C,IS=40A,VGS=0V â¤
trr Reverse Recovery Time
â
100 150
nS TJ=25°C,IF=40A
Qrr Reverse Recovery Charge
â
410 610
nC di/dt=100A/μs â¤
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
â Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
â¡ Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11)
⢠Starting TJ = 25°C, L = 370mH, RG = 25Ω, IAS = 40A,
VGS=10V (See Figure 12)
⣠ISD ⤠40A, di/dt ⤠300A/μs, VDD ⤠V(BR)DSS,TJ ⤠175°C
⤠Pulse width ⤠400μs; duty cycle ⤠2%.
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