E75N075 Datasheet, PDF (1/2 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET

z Dynamic dv/dt Rating
z 175°C Operating Temperature
z Fast switching
z Ease of Paralleling
z Simple Drive Requirements
E 75N075
HEXFET^® Power MOSFET
VDSS = 75V
ID25 = 75A
RDS(ON) = 13.0 mΩ
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID@TC=25°C Continuous Drain Current, VGS@10V
ID@TC=100°C Continuous Drain Current, VGS@10V
IDM
Pulsed Drain Current ②
PD@TC=25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAR
Single Pulse Avalanche Energy ③
dv/dt
Peak Diode Recovery dv/dt ④
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
75 ①
60
300
200
1.5
±20
23
5.9
–55 to +175
300(1.6mm from case)
10 Ibf . in(1.1N . m)
Pin1–Gate
Pin2–Drain
Pin3–Source
Units
A
W
W/°C
V
mJ
V/ns
ْ°C
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
0.65
RθCS
Case-to-Sink, Flat, Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
—
62
Units
ْ°C /W
1