E3710 Datasheet, PDF (2/2 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET

E 3710
HEXFET^® Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 100
V VGS=0V,ID=250uA
V(BR)DSS/
Breakdown Voltage Temp. Coefficient
TJ
0.13
V/ْC Reference to 25ْC,ID=1mA
RDS(on)
Static Drain-to-Source On-resistance
0.023
VGS=10V,ID=28A
VGS(th)
Gate Threshold Voltage
2.0
4.0 V VDS=VGS, ID=250µA
gfs
Forward Transconductance
25
S VDS=25V,ID=28A
IDSS
Drain-to-Source Leakage current
25
VDS=100V,VGS=0V
A
250
VDS=80V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
IGSS
Gate-to-Source Reverse leakage
100
VGS=20V
nA
-100
VGS=-20V
Qg
Total Gate Charge
130
ID=28A
Qgs
Gate-to-Source charge
Qgd
Gate-to-Drain ("Miller") charge
26 nC VDS=80V
43
VGS=10V See Fig.6 and 13
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
12
VDD=50V
58
ID=28A
nS
45
RG=2.5Ω
47
VGS=10V See Figure 10
LD
Internal Drain Inductance
Between lead,
4.5
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
7.5
and center of
die contact
Ciss
Input Capacitance
3130
VGS=0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
410
pF VDS=25V
72
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current .
IS
(Body Diode)
Pulsed Source Current
.
ISM
(Body Diode)
MOSFET symbol
57
showing the
A
integral reverse
230
p-n junction diode.
VSD Diode Forward Voltage
1.2
V TJ=25ْC,IS=28A,VGS=0V
trr Reverse Recovery Time
140 220 nS TJ=25ْC,IF=28A
Qrr Reverse Recovery Charge
670 1010 nC ^{di/dt=100A/µs}
ton Forward Turn-on Time
Notes:
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Repetitive rating; pulse width limited by
ISD 28A,di/dt 250A/ S,VDD V(BR)DSS,
max. junction temperature(see figure 11)
TJ 175 ْC
VDD=25V ,starting TJ=25 ْC ,L=0.70mH
Pulse width 300 S; duty cycle 2%.
RG=25 IAS=28A(see Figure 12)
2