E3710 Datasheet, PDF (1/2 Pages) Estek Electronics Co. Ltd – HEXFET Power MOSFET

Dynamic dv/dt Rating
175 ْC Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements
E 3710
HEXFET^® Power MOSFET
VDSS = 100V
ID25 = 60A
RDS(ON)= 0.023
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID@TC=25 ْC Continuous Drain Current, VGS@10V
ID@TC=100ْC Continuous Drain Current, VGS@10V
IDM
Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
60
40
230
200
1.3
±20
20
5.8
–55 to +175
300(1.6mm from case)
10 Ibf in(1.1N m)
Pin1–Gate
Pin2–Drain
Pin3–Source
Units
A
W
W/ ْC
V
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
RθJA
Junction-to-Ambient
62
Units
ْC/W
1