M12L32162A_0712 Datasheet, PDF (8/28 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16Bit x 2Banks Synchronous DRAM

ESMT
M12L32162A
Operation Temperature Condition -40°C~105°C
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
Function
BA
RFU
A11~A10/AP
RFU
A9
W.B.L
A8 A7
TM
A6 A5 A4
CAS Latency
A3 A2 A1 A0
BT
Burst Length
Test Mode
A8 A7
Type
A6
0
0 Mode Register Set 0
0
1
Reserved
0
1
0
Reserved
0
1
1
Reserved
0
Write Burst Length
1
A9
Length
1
0
Burst
1
1
Single Bit
1
CAS Latency
Burst Type
Burst Length
A5 A4 Latency A3 Type A2 A1 A0 BT = 0 BT = 1
0
0 Reserved 0 Sequential 0
0
0
1
1
0
1
1
1 Interleave 0
0
1
2
2
1
0
2
0
1
0
4
4
1
1
3
0
1
1
8
8
0
0 Reserved
1
0
0 Reserved Reserved
0
1 Reserved
1
0
1 Reserved Reserved
1
0 Reserved
1
1
0 Reserved Reserved
1
1 Reserved
1
1
1 Full Page Reserved
Full Page Length : 256
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.2
8/28